Semiconductor device and method of manufacturing the same

ABSTRACT

Provided is a method of manufacturing a semiconductor device. In the method, a growth substrate provided with a single crystal semiconductor thin layer, a support substrate, and a temporary substrate are prepared, the growth substrate, the support substrate, and the temporary substrate are bonded to one another with the support substrate therebetween through functional wafer coupling layers, the growth substrate is lifted off from the single crystal semiconductor thin layer, and the temporary substrate is lifted off from the support substrate.

TECHNICAL FIELD

The present disclosure relates to a semiconductor device and a method ofmanufacturing the semiconductor device.

BACKGROUND ART

Group III-V single crystal semiconductor thin layers including nitride,and group II-VI single crystal semiconductor thin layers including oxideare grown on the upper portion of a transparent growth substrate at atemperature of about 400° C. or more and in atmosphere of various typesof severe gas.

In general, a growth substrate is formed of sapphire (Al₂O₃), siliconcarbide (SiC), gallium nitride (GaN), aluminum nitride (AlN), aluminumgallium nitride (AlGaN), zinc oxide (ZnO), or silicon (Si).

Especially, sapphire is economically and technically advantageous, andthus, it is widely used. However, since the electrical and thermalconductivities of a growth substrate formed of sapphire are even poorerthan that of a growth substrate formed of other materials such as Si, itis difficult to manufacture high performance electronic devices orphotoelectric devices on the growth substrate formed of sapphire.

For example, when a single crystal thin layer formed of gallium nitride(GaN), which is a group III-V semiconductor, is grown on a growthsubstrate formed of sapphire to manufacture a light emitting diode (LED)that is a photoelectric device, it is difficult to dispose twoelectrodes for applying an external current to the LED in a verticalstructure facing the upper and lower sides of the single crystal thinlayer, due to the sapphire growth substrate that is electricallyinsulated.

Thus, to apply the external current to the two electrodes of the LED,MESA etching is performed such that the gallium nitride layer adjacentto the sapphire growth substrate is exposed to air, and electrodes areseparately disposed in a horizontal structure on the upper portion ofthe gallium nitride single crystal thin layer, which have differentcharge carriers.

However, the LED having a horizontal structure generates a large amountof heat due to current crowding that an applied external current iscollected on an edge that is MESA-etched. In addition, due to lowerthermal conductivity of the sapphire growth substrate, it is difficultto emit the large amount of heat generated when the device is driven, tothe outside. Especially, this difficulty negatively affects the servicelife and reliability of a device driven when applying a large current.

To address the current crowding and inefficient heat emission, avertical device manufacturing method has been suggested in which asupport having excellent electrical and thermal conductivities is formedon the upper portion of the single crystal semiconductor thin layer atthe opposite side to the sapphire growth substrate, and a photon-beamhaving a band of a specific wavelength is irradiated on the rear surfaceof the sapphire growth substrate, so that the single crystalsemiconductor thin layer is lifted off from the sapphire growthsubstrate and transferred.

The effect of the vertical device manufacturing method through thelifting-off and transferring of the single crystal semiconductor thinlayer depends on how effectively the support having excellent electricaland thermal conductivities is formed.

Methods of forming a closely adhered support include an electro-platingprocess and a wafer bonding process, which are applied to partially forma vertical device.

When the electro-plating process is applied to form a closely adheredsupport, it is relatively easy to form a vertical device, but a finalproduct has poor reliability.

Meanwhile, as illustrated in FIGS. 1A to 1E, when a support formedthrough a wafer bonding process is used, a process is relatively simple,and a final product has excellent reliability.

FIGS. 1A to 1E are cross-sectional views illustrating wafer bondingbetween dissimilar materials and a single crystal semiconductor thinlayer transfer process in the related art.

Referring to FIG. 1A, first, a single crystal multi-layer thin layer 102for an electronic or photoelectric device including a gallium nitride(GaN)-based semiconductor is grown on a transparent sapphire growthsubstrate 101 at a temperature of 500° C. or more in atmosphere ofvarious types of severe gas, and then, a soldering material 103 forwafer bonding is continuously formed on the single crystal multi-layerthin layer 102. The soldering material 103 may be alloy or solidsolution containing metal having a melting point less than 300° C. suchas indium (I), stannum (Sn), or zinc (Zn).

Then, referring to FIG. 1B, the same material as the soldering material103 formed on the single crystal multi-layer thin layer 102 or asoldering material 202 including a metal forming soldering alloy andused for wafer bonding is formed on a support 201 having excellentelectrical and thermal conductivities. For example, the support 201 maybe formed of Si, Ge, or GaAs, and the soldering materials 103 and 202may be formed of Au—Sn, Au—In, or Pd—In.

Referring to FIG. 1C, after operation S10 in which the two wafers areprepared as described above, the wafers are bonded by bring thesoldering materials 103 and 202 to contact with each other at atemperature less than 300° C. and a predetermined pressure.

After operation S20 in which the two wafers are bonded as describedabove, a photon-beam having a band of a specific wavelength isirradiated on the rear surface of the sapphire growth substrate 101, sothat the single crystal semiconductor thin layer 102 is lifted off fromthe sapphire growth substrate (refer to FIG. 1D) and transferred to theupper side of the support 201 in operation S30 (refer to FIG. 1E).

After that, although not shown, high performance electronic orphotoelectric devices having various dimensions and shapes are formed.

However, the above-described wafer bonding process requires waferbonding between materials having different thermal expansioncoefficient, which is not easy. Especially, due to thermal shockgenerated after wafer bonding between different materials, a growthsubstrate, a single crystal semiconductor thin layer, and a support mayhave defects such as a crack, a breakage, and debonding.

In addition, a limitation that a wafer bonding temperature less than300° C. is required to minimize thermal stress generated after waferbonding, and limitations caused by a soldering material should besolved. Furthermore, a wafer bonding process adapted for mass productionis required.

Thus, to solve the above-described limitations and reduce manufacturingcosts of electronic or photoelectric devices through mass production, amethod of transferring a single crystal semiconductor thin layer to theupper side of a dissimilar support substrate should be developed, andsimultaneously, a method of manufacturing high performance electronic orphotoelectric devices using this method should be developed.

DISCLOSURE Technical Problem

Embodiments provide a semiconductor device and a method of manufacturingthe semiconductor device.

Embodiments provide a semiconductor device and a method of manufacturingthe semiconductor device, which include a method of transferring asingle crystal semiconductor thin layer to a dissimilar supportsubstrate to manufacture an electronic device and a photoelectricdevice, and include a transferred stacked structure.

Technical Solution

In one embodiment, a method of manufacturing a semiconductor device,comprises: preparing a growth substrate provided with a single crystalsemiconductor thin layer, a support substrate, and a temporarysubstrate; bonding the growth substrate, the support substrate and thetemporary substrate to one another with the support substratetherebetween through functional wafer coupling layers; lifting off thegrowth substrate from the single crystal semiconductor thin layer; andlifting off the temporary substrate from the support substrate.

In another embodiment, a semiconductor device comprises: a supportsubstrate; a functional wafer bonding layer on the support substrate;and a single crystal semiconductor thin layer on the functional waferbonding layer.

The details of one or more embodiments are set forth in the accompanyingdrawings and the description below. Other features will be apparent fromthe description and drawings, and from the claims.

Advantageous Effects

Embodiments provide a semiconductor device and a method of manufacturingthe semiconductor device.

Embodiments provide a semiconductor device and a method of manufacturingthe semiconductor device, which include a method of transferring asingle crystal semiconductor thin layer to a dissimilar supportsubstrate to manufacture an electronic device and a photoelectric

DESCRIPTION OF DRAWINGS

FIGS. 1A to 1E are cross-sectional views illustrating wafer bondingbetween dissimilar materials and a single crystal semiconductor thinlayer transfer process in the related art.

FIGS. 2A, 2B, 2C, 2D, 3A, 3B, and 3C are cross-sectional viewsillustrating a method of transferring a single crystal semiconductorthin layer to a support substrate in a semiconductor device and a methodof manufacturing the same according to an embodiment.

FIG. 4 is a cross-sectional view illustrating a stacked structure with asingle crystal semiconductor thin layer transferred to a supportsubstrate, according to an embodiment.

FIGS. 5 to 9 are cross-sectional views illustrating a process of forminga vertical light emitting diode using the stacked structure of FIG. 4.

MODE FOR INVENTION

In the description of embodiments, it will be understood that when alayer (or film), region, pattern or structure is referred to as being‘on’ or ‘under’ another layer (or film), region, pad or pattern, theterminology of ‘on’ and ‘under’ includes both the meanings of ‘directly’and ‘indirectly’. Further, the reference about ‘on’ and ‘under’ eachlayer will be made on the basis of drawings.

In the drawings, the thickness or size of each layer is exaggerated,omitted, or schematically illustrated for convenience in description andclarity. Also, the size of each element does not entirely reflect anactual size.

Hereinafter, a semiconductor device and a method of manufacturing thesame according to embodiments will be described with reference to theaccompanying drawings.

FIGS. 2A, 2B, 2C, 2D, 3A, 3B, and 3C are cross-sectional viewsillustrating a method of transferring a single crystal semiconductorthin layer to a support substrate in a semiconductor device and a methodof manufacturing the same according to an embodiment.

Referring to FIGS. 2 and 3, a growth substrate 301, a support substrate401, and a temporary substrate 501 are prepared separately.

The growth substrate 301 and the temporary substrate 501 may opticallyhave a transparency of 70% or more within a wavelength range of about500 nm or less. For example, the growth substrate 301 and the temporarysubstrate 501 may be formed of one of sapphire (Al₂O₃), silicon carbide(SiC), gallium nitride (GaN), indium gallium nitride (InGaN), aluminumgallium nitride (AlGaN), aluminum nitride (AlN), spinel, lithiumniobate, neodymium gallate, and gallium oxide (Ga₂O₃).

When the growth substrate 301 and the temporary substrate 501 mayoptically have a transparency of about 70% or more within a wavelengthrange of about 500 nm or less, a thermochemical decomposition reactionby irradiation of a photon-beam may be facilitated, which will bedescribed later.

A difference in thermal expansion coefficient between the growthsubstrate 301 and the temporary substrate 501 may be about 2 ppm orless.

The support substrate 401 may have excellent electrical and thermalconductivities. For example, the support substrate 401 may be a waferformed of one of Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC, and AlSiC, ora plate formed of one of Ni, Cu, Nb, Mo, Ta, NbCu, MoCu, TaCu, SiAl,CuW, NiW, and NiCu.

In the current embodiment, the growth substrate 301, the supportsubstrate 401, and the temporary substrate 501 are formed of sapphire(Al₂O₃), silicon (Si), and sapphire (Al₂O₃), respectively. The supportsubstrate 401 is dissimilar to the growth substrate 301. Sapphireforming the growth substrate 301 may have a single crystal structure(epitaxy structure), but the support substrate 401 and the temporarysubstrate 501 may not have a single crystal structure.

Referring to FIG. 2A, a sacrifice layer 302 and a single crystalsemiconductor thin layer 303 are sequentially formed on the front sideof the growth substrate 301, and then, a functional wafer bonding layer304 is stacked on the upper portion of the single crystal semiconductorthin layer 303.

Referring to FIG. 2B, functional wafer bonding layers 402 and 403 arestacked on the front and back sides of the support substrate 401.

Referring to FIG. 2C, a sacrifice layer 502 and a functional waferbonding layer 503 are stacked on the front side of the temporarysubstrate 501.

The sacrifice layers 302 and 502 disposed on the upper portions of thegrowth substrate 301 and the temporary substrate 501 may be formed of amaterial having an energy band-gap about 6.5 eV or less. For example,the sacrifice layers 302 and 502 may include at least one of GaN, InGaN,AlGaN, AlInN, AlGaInN, InN, AlN, SiC, SiCN, ZnInN, InZnO, GaZnO, ZnO,MgZnO, PZT, ITO, SiO₂, and SiN_(x).

Alternatively, the sacrifice layers 302 and 502 disposed on the upperportions of the growth substrate 301 and the temporary substrate 501 maybe formed of different materials. For example, the sacrifice layer 302disposed on the upper portion of the growth substrate 301 may be formedof InGaN, and the sacrifice layer 502 disposed on the upper portion ofthe temporary substrate 501 may be formed of ZnO.

Like the growth substrate 301 and the temporary substrate 501, thesacrifice layers 302 and 502 may optically have a transparency of 70% ormore.

The single crystal semiconductor thin layer 303 may be a single layer ora multi layer. For example, the single crystal semiconductor thin layer303 may include one of a group III-V compound, a group II-VI compound,Si, SiC, and SiGe. In the current embodiment, the single crystalsemiconductor thin layer 303 includes an n type clad layer, an activelayer, and a p type clad layer in a light emitting diode structure,which includes a group III-V nitride-based semiconductor

The n type clad layer may be formed of a group III-V nitride-basedsemiconductor having a composition formula of Al_(x)In_(y)Ga_((1−x−y))N(0≦x≦1, 0≦y≦1, 0≦x+y≦1), and an n type dopant is added to the n typeclad layer. For example, the n type clad layer may be formed of GaN.Before the n type clad layer is grown, a material layer (referred to asa buffer layer), which buffers stress due to lattice mismatch and athermal expansion coefficient difference, may be inserted. For example,GaN, AlN, InGaN, AlGaN, SiC, SiCN, and Re—Si (rhenium silicide) may beused.

The active layer has a quantum well structure, and is formed of a groupIII-V nitride-based semiconductor having a composition formula ofAl_(x)In_(y)Ga_((1−x−y))N (0≦x≦1, 0≦y≦1, 0≦x+y≦1).

Like the n type clad layer, the p type clad layer may be formed of agroup III-V nitride-based semiconductor having a composition formula ofAl_(x)In_(y)Ga_((1−x−y))N (0≦x≦1, 0≦y≦1, 0≦x+y≦1), for example, beformed of GaN, and an p type dopant is added to the p type clad layer.

The functional wafer bonding layers 304, 402, 403, 503 formedrespectively on the growth substrate 301, the support substrate 401, andthe temporary substrate 501 may have single layers or multi layers. Thefunctional wafer bonding layers 304, 402, 403, 503 mechanically bond thegrowth substrate 301, the support substrate 401, and the temporarysubstrate 501, and may separately or simultaneously function as an ohmicor schottky electrode that is an electrically excellent conductor, anoptically excellent reflector, a diffusion barrier preventing a flowbetween materials, and adhesive increasing adhesion force betweenwafers.

The functional wafer bonding layers 304, 402, 403, and 503 disposedrespectively on the growth substrate 301, the support substrate 401, andthe temporary substrate 501 are formed through typical electro platingand physical/chemical deposition, and have a thickness ranging fromabout 1 μm to about 30 μm. For example, the functional wafer bondinglayers 304, 402, 403, and 503 may be formed of Au.

In the current embodiment, the functional wafer bonding layers 304, 402,403, and 503 are disposed on the growth substrate 301, the supportsubstrate 401, and the temporary substrate 501, but functional waferbonding layers may be formed on one of surfaces of the growth substrate301 and the support substrate 401 facing each other and on one ofsurfaces of the support substrate 401 and the temporary substrate 501facing each other.

As described above, after the structures illustrated in FIGS. 2A, 2B and2C are prepared in operation S110, the functional wafer bonding layer402 on the front side of the support substrate 401 and the functionalwafer bonding layer 304 on the growth substrate 301 are brought tocontact with each other and aligned, and the functional wafer bondinglayer 403 on the back side of the support substrate 401 and thefunctional wafer bonding layer 503 on the temporary substrate 501 arebrought to contact with each other and aligned, and then, the wafers arebonded in a sandwich structure to form a combined body as illustrated inFIG. 2D. At this point, a thermo-compressive bonding in which apredetermined pressure is applied at a temperature ranging from about200° C. to about 600° C. may be used to bond the wafers.

Before forming the combined body having a sandwich structure, thesacrifice layer 302, the single crystal semiconductor thin layer 303,and the functional wafer bonding layer 304 disposed on the growthsubstrate 301 may be formed in a unit cell shape having a plurality oflattice cell shapes through isolation etching. Also, the sacrifice layer502 and the functional wafer bonding layer 503 disposed on the temporarysubstrate 501 may be formed in a unit cell shape having a plurality oflattice cell shapes through isolation etching.

After the combined body is formed in operation S120, a first photon-beamis irradiated on the rear surface of the growth substrate 301 of thecombined body having a sandwich structure to lift-off the growthsubstrate 301 through a thermo-chemical decomposition reaction asillustrated in FIG. 3A. For example, KrF excimer laser or YAG laser maybe used as the first photon-beam.

After the growth substrate 301 is lifted-off in operation S130, a secondphoton-beam is irradiated on the back side of the temporary substrate501 of the combined body having a sandwich structure to lift-off thetemporary substrate 501 through a thermo-chemical decomposition reactionas illustrated in FIG. 3B. For example, KrF excimer laser or YAG lasermay be used as the second photon-beam.

After the temporary substrate 501 is lifted-off in operation S140,remainders of the sacrifice layers 302 and 502 and the functional waferbonding layers 503 and 403 are removed using dry etching or wet etching.However, it may be unnecessary to remove the functional wafer bondinglayer 503 and 403.

Thus, the single crystal semiconductor thin layer 303 is transferred tothe support substrate 401 as illustrated in FIG. 3C.

In the method of manufacturing the semiconductor device according to thecurrent embodiment, the growth substrate 301 and the temporary substrate501 are symmetrically disposed in a sandwich shape with the supportsubstrate 401 therebetween to transfer the single crystal semiconductorthin layer 303 to the support substrate 401.

If the single crystal semiconductor thin layer 303 on the growthsubstrate 301 is transferred to the support substrate 401 without usingthe temporary substrate 501, the single crystal semiconductor thin layer303 may be cracked or bent due to a difference in thermal expansioncoefficient between the growth substrate 301 and the support substrate401.

However, in the method of manufacturing the semiconductor deviceaccording to the current embodiment, since the growth substrate 301 andthe temporary substrate 501 having similar thermal expansioncoefficients are symmetrically disposed with the support substrate 401therebetween, crack or bending of the single crystal semiconductor thinlayer 303 due to a difference in thermal expansion coefficient can beprevented.

FIG. 4 is a cross-sectional view illustrating a stacked structure with asingle crystal semiconductor thin layer transferred to a supportsubstrate, according to an embodiment.

Referring to FIG. 4, a stacked structure including a support substrate601, a functional wafer bonding layer 602 on the support substrate 601,and a single crystal semiconductor thin layer 603 on the functionalwafer bonding layer 602 is manufactured according to the processillustrated in FIGS. 2 and 3.

The material of the support substrate 601 is determined according toapplication purposes. For example, a material that is electricallyconductive and has thermally excellent conductivity may be applied to atypical vertical device. For example, the support substrate 601 may beformed of silicon (Si).

The functional wafer bonding layer 602 may be a single layer or a multilayer. In this case, the functional wafer bonding layer 602 mechanicallybonds the support substrate 601 to the single crystal semiconductor thinlayer 603, and may separately or simultaneously function as an ohmic orschottky electrode that is an electrically excellent conductor, anoptically excellent reflector, a diffusion barrier preventing a flowbetween materials, and adhesive increasing adhesion force between thesupport substrate 601 and the single crystal semiconductor thin layer603.

The functional wafer bonding layer 602 is formed using typicalphysical/chemical deposition and electro plating, and may have athickness ranging from about 1 μm to about 30 μm. For example, thefunctional wafer bonding layer 602 may be formed of one of metal, alloy,and metal solid solution.

The single crystal semiconductor thin layer 603 may be a single layer ora multi layer. The single crystal semiconductor thin layer 603 mayinclude a group III-V compound, a group II-VI compound, Si, SiC, orSiGe. For example, the single crystal semiconductor thin layer 603includes an n type clad layer, an active layer, and a p type clad layerin a light emitting diode structure, which includes a group III-Vnitride-based semiconductor.

FIGS. 5 to 9 are cross-sectional views illustrating a process of forminga vertical light emitting diode using the stacked structure of FIG. 4.

Referring to FIG. 5, the single crystal semiconductor thin layer 603 isformed in a unit cell shape having a plurality of lattice cell shapesthrough isolation etching. At this point, the functional wafer bondinglayer 602 may also be formed in a unit cell shape having a plurality oflattice cell shapes, like the single crystal semiconductor thin layer603.

However, as illustrated in FIG. 2, isolation etching may be performed onthe single crystal semiconductor thin layer 603 before forming thestacked structure of FIG. 4.

Referring to FIG. 6, a device passivation layer 704, which is formed ofelectrically insulated material to protect a unit device, is formed, andthe device passivation layer 704 is selectively removed to expose aportion of the single crystal semiconductor thin layer 603. For example,the device passivation layer 704 may be formed of Si0₂.

Referring to FIG. 7, ohmic electrodes 705 are formed on the singlecrystal semiconductor thin layer 603.

Referring to FIGS. 8 and 9, the support substrate 601 is vertically cutusing laser 706 or a saw to complete unit device chips.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

INDUSTRIAL APPLICABILITY

The semiconductor device and the method of manufacturing the sameaccording to the embodiments can be applied to electronic orphotoelectric devices.

1. A method of manufacturing a semiconductor device, comprising:preparing a growth substrate provided with a single crystalsemiconductor thin layer, a support substrate, and a temporarysubstrate; bonding the growth substrate, the support substrate and thetemporary substrate to one another with the support substratetherebetween through functional wafer coupling layers; lifting off thegrowth substrate from the single crystal semiconductor thin layer; andlifting off the temporary substrate from the support substrate.
 2. Themethod according to claim 1, comprising a sacrifice layer between thesingle crystal semiconductor thin layer and the growth substrate and asacrifice layer on the support substrate.
 3. The method according toclaim 2, wherein the sacrifice layer is formed of a material having anenergy band-gap of about 6.5 eV or less.
 4. The method according toclaim 1, wherein the functional wafer bonding layer is disposed in atleast one of a space between the growth substrate and the supportsubstrate and a space between the support substrate and the temporarysubstrate.
 5. The method according to claim 1, wherein the growthsubstrate and the temporary substrate optically have a transparency ofabout 70% or more for light having a wavelength region of about 500 nmor less.
 6. The method according to claim 1, wherein a difference inthermal expansion coefficient between the growth substrate and thetemporary substrate is about 2 ppm or less.
 7. The method according toclaim 1, wherein the single crystal semiconductor thin layer has asingle or multi layer structure formed of one of a group III-V compound,a group II-VI compound, silicon (Si), silicon carbide (SiC), or silicongermanium (SiGe).
 8. The method according to claim 1, wherein thefunctional wafer bonding layer is a single or multi layer with athickness ranging from about 1 μm to about 30 μm.
 9. The methodaccording to claim 1, wherein the growth substrate, the supportsubstrate, and the temporary substrate are bonded using athermo-compressive bonding method in which a predetermined pressure isapplied at a temperature ranging from about 200° C. to about 600° C. 10.The method according to claim 1, wherein the growth substrate and thetemporary substrate are lifted off using a thermochemical decompositionreaction through irradiation of a photon-beam.
 11. The method accordingto claim 1, comprising performing isolation etching on the singlecrystal semiconductor thin layer to form unit devices having a pluralityof grating cell shapes before the bonding of the growth substrate, thesupport substrate, and the temporary substrate.
 12. A semiconductordevice comprising: a support substrate; a functional wafer bonding layeron the support substrate; and a single crystal semiconductor thin layeron the functional wafer bonding layer.
 13. The semiconductor deviceaccording to claim 12, wherein the functional wafer bonding layercomprises: a first functional wafer bonding layer adjacent to thesupport substrate; and a second functional wafer bonding layer adjacentto the single crystal semiconductor thin layer.
 14. The semiconductordevice according to claim 12, wherein the functional wafer bonding layeris formed of gold (Au).
 15. The semiconductor device according to claim12, wherein the support substrate is a wafer formed of one of silicon(Si), gallium arsenic (GaAs), germanium (Ge), silicon germanium (SiGe),aluminum nitride (AlN), gallium nitride (GaN), aluminum gallium nitride(AlGaN), silicon carbide (SiC), and aluminum silicon carbide (AlSiC), ora plate formed of one of nickel (Ni), copper (Cu), niobium (Nb),molybdenum (Mo), tantalum (Ta), niobium copper (NbCu), molybdenum copper(MoCu), tantalum copper (TaCu), silicon aluminum (SiAl), copper tungsten(CuW), nickel tungsten (NiW), and nickel copper (NiCu).
 16. Thesemiconductor device according to claim 12, wherein the single crystalsemiconductor thin layer has a single or multi layer structure formed ofone of a group III-V compound, a group II-VI compound, silicon (Si),silicon carbide (SiC), or silicon germanium (SiGe).
 17. Thesemiconductor device according to claim 12, wherein the single crystalsemiconductor thin layer is a light emitting diode comprising an n typeclad layer, an active layer, and a p type clad layer.